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Voltage controlled small signal switch. Rugged and , Maximum Ratings Symbol SOT-23 TA = 25° unless otherwise noted C Parameter BS170 MMBF170 , otherwise noted C Parameter BS170 MMBF170 Units Maximum Power Dissipation Derate above 25 , © 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 mA - 55 to 150 Symbol. Original: PDF

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mmbf170 pdf admin December 9, 2018 This N-Channel enhancement mode field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology.

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MMBF170-7-F N-channel Enhancement MODE Field Effect Transistor . N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features. Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant (Note 2).

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